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Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET - Synthesis Lectures on Emerging Engineering Technologies Nabil Shovon Ashraf
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Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET - Synthesis Lectures on Emerging Engineering Technologies
Nabil Shovon Ashraf
Explores device parameters such as channel inversion carrier mobility and its characteristic evolution. This book is the first to illustrate that a single subthreshold slope value is erroneous and at lower gate voltage below inversion, subthreshold slope value exhibits a variation tendency on applied gate voltage below threshold.
89 pages
| Media | Books Hardcover Book (Book with hard spine and cover) |
| Released | July 13, 2018 |
| ISBN13 | 9781681733876 |
| Publishers | Morgan & Claypool Publishers |
| Pages | 89 |
| Dimensions | 150 × 220 × 20 mm · 825 g |
| Series Editor | Iniewski, Kris |
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