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Nitride Wide Bandgap Semiconductor Material and Electronic Devices Yue Hao 1st edition
Nitride Wide Bandgap Semiconductor Material and Electronic Devices
Yue Hao
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).
392 pages
| Media | Books Paperback Book (Book with soft cover and glued back) |
| Released | June 30, 2020 |
| ISBN13 | 9780367574369 |
| Publishers | Taylor & Francis Ltd |
| Pages | 392 |
| Dimensions | 150 × 220 × 10 mm · 771 g |
| Language | English |